Datasheets
2N3632 by:

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN

Part Details for 2N3632 by Microsemi Corporation

Overview of 2N3632 by Microsemi Corporation

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Applications Consumer Electronics Audio and Video Systems

Part Details for 2N3632

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2N3632 Part Data Attributes

2N3632 Microsemi Corporation
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2N3632 Microsemi Corporation RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description M137, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 3 A
Collector-Base Capacitance-Max 20 pF
Collector-Emitter Voltage-Max 40 V
Configuration SINGLE
DC Current Gain-Min (hFE) 5
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-MUPM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Package Body Material METAL
Package Shape ROUND
Package Style POST/STUD MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 23 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position UPPER
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 400 MHz

Alternate Parts for 2N3632

This table gives cross-reference parts and alternative options found for 2N3632. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N3632, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N3632 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN Semitronics Corp 2N3632 vs 2N3632
2N3632 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60, TO-60, 3 PIN Raytheon Semiconductor 2N3632 vs 2N3632
2N3632 VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60, CERAMIC PACKGE-3 Texas Instruments 2N3632 vs 2N3632
Part Number Description Manufacturer Compare
MS1504 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M135, 4 PIN Microsemi Corporation 2N3632 vs MS1504
SD1433 UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN STMicroelectronics 2N3632 vs SD1433
MS1501 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, PLASTIC, M122, 4 PIN Microsemi Corporation 2N3632 vs MS1501
BLW80 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-122A, 4 PIN, BIP RF Power NXP Semiconductors 2N3632 vs BLW80
MRF653 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC 2N3632 vs MRF653
2N3632 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60, TO-60, 3 PIN, BIP RF Power NXP Semiconductors 2N3632 vs 2N3632
2N5946 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN Motorola Semiconductor Products 2N3632 vs 2N5946
MRF240A RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN Motorola Semiconductor Products 2N3632 vs MRF240A
PTB20134 RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN Ericsson 2N3632 vs PTB20134
MRF5175 UHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC 2N3632 vs MRF5175

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