Part Details for PHP21N06T,127 by NXP Semiconductors
Overview of PHP21N06T,127 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Part Details for PHP21N06T,127
PHP21N06T,127 CAD Models
PHP21N06T,127 Part Data Attributes
|
|
PHP21N06T,127
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
PHP21N06T,127
NXP Semiconductors
PHP21N06T - N-channel TrenchMOS standard level FET TO-220 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT78 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | ESD PROTECTED | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHP21N06T,127
This table gives cross-reference parts and alternative options found for PHP21N06T,127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHP21N06T,127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK9506-55A,127 | BUK9506-55A - N-channel TrenchMOS FET TO-220 3-Pin | NXP Semiconductors | PHP21N06T,127 vs BUK9506-55A,127 |
| PSMN4R6-60PS | Power Field-Effect Transistor | Nexperia | PHP21N06T,127 vs PSMN4R6-60PS |
| IRFS630B | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | PHP21N06T,127 vs IRFS630B |
| APT5030BNR | 21A, 500V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | Microsemi Corporation | PHP21N06T,127 vs APT5030BNR |
| BUK436-200A | TRANSISTOR 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHP21N06T,127 vs BUK436-200A |
| 934055638127 | 75A, 55V, 0.0067ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB, TO-220AB, 3 PIN | NXP Semiconductors | PHP21N06T,127 vs 934055638127 |
| BUK444-500B | TRANSISTOR 1.9 A, 500 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | PHP21N06T,127 vs BUK444-500B |
| PHX1N40E | TRANSISTOR 1.75 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3, FET General Purpose Power | NXP Semiconductors | PHP21N06T,127 vs PHX1N40E |
| BUK7520-55 | TRANSISTOR 52 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | PHP21N06T,127 vs BUK7520-55 |
| APT1001R1BVFR | Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Advanced Power Technology | PHP21N06T,127 vs APT1001R1BVFR |