Part Details for IRFS630B by Fairchild Semiconductor Corporation
Overview of IRFS630B by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFS630B
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFS630B-600039-ND
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DigiKey | 9A, 200V, 0.4OHM, N-CHANNEL MOSF Min Qty: 533 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
743 In Stock |
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$0.5600 | Buy Now |
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Quest Components | 19 |
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$0.7525 / $1.5050 | Buy Now | |
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Rochester Electronics | 9A, 200V, 0.4ohm, N-Channel MOSFET, TO-220AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 743 |
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$0.4835 / $0.5688 | Buy Now |
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Chip1Cloud | 200V N-Channel MOSFET | 23500 |
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RFQ |
Part Details for IRFS630B
IRFS630B CAD Models
IRFS630B Part Data Attributes:
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IRFS630B
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
IRFS630B
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS630B
This table gives cross-reference parts and alternative options found for IRFS630B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS630B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUK474-200A | TRANSISTOR 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power | NXP Semiconductors | IRFS630B vs BUK474-200A |
| PHP2N60 | TRANSISTOR 2.8 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRFS630B vs PHP2N60 |
| BUK637-500B | TRANSISTOR 10 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IRFS630B vs BUK637-500B |
| APT40M70LVR | Power Field-Effect Transistor, 57A I(D), 400V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Advanced Power Technology | IRFS630B vs APT40M70LVR |
| PHX2N60 | TRANSISTOR 2.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | IRFS630B vs PHX2N60 |
| PHP18NQ20T | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFS630B vs PHP18NQ20T |
| APT6033BNR | Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Advanced Power Technology | IRFS630B vs APT6033BNR |
| PHP45N03LT | TRANSISTOR 45 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRFS630B vs PHP45N03LT |
| PHP191NQ06LT | Power Field-Effect Transistor | Nexperia | IRFS630B vs PHP191NQ06LT |
| BUK553-100B | TRANSISTOR 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRFS630B vs BUK553-100B |