Part Details for PHB66NQ03LT by NXP Semiconductors
Overview of PHB66NQ03LT by NXP Semiconductors
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PHB66NQ03LT
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 592 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 473 |
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$1.9314 / $3.1320 | Buy Now |
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ComSIT USA | N-CHANNEL TRENCHMOS LOGIC LEVEL FET Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 795 |
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RFQ | |
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Chip1Cloud | N-channel TrenchMOS transistor | 41000 |
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RFQ | |
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Sense Electronic Company Limited | TO-263 | 3900 |
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RFQ |
Part Details for PHB66NQ03LT
PHB66NQ03LT CAD Models
PHB66NQ03LT Part Data Attributes
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PHB66NQ03LT
NXP Semiconductors
Buy Now
Datasheet
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PHB66NQ03LT
NXP Semiconductors
TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | PLASTIC, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 66 A | |
Drain-source On Resistance-Max | 0.0136 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 93 W | |
Pulsed Drain Current-Max (IDM) | 228 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PHB66NQ03LT
This table gives cross-reference parts and alternative options found for PHB66NQ03LT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB66NQ03LT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHB66NQ03LT/T3 | TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT vs PHB66NQ03LT/T3 |
PHB66NQ03LT,118 | N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin | Nexperia | PHB66NQ03LT vs PHB66NQ03LT,118 |
934056840118 | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT vs 934056840118 |
PHB66NQ03LT | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT vs PHB66NQ03LT |
PHB66NQ03LT/T3 | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT vs PHB66NQ03LT/T3 |
934056840118 | TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT vs 934056840118 |
PHB66NQ03LT,118 | N-channel TrenchMOS logic level FET D2PAK 3-Pin | NXP Semiconductors | PHB66NQ03LT vs PHB66NQ03LT,118 |