Part Details for PHB66NQ03LT by Nexperia
Overview of PHB66NQ03LT by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PHB66NQ03LT
PHB66NQ03LT CAD Models
PHB66NQ03LT Part Data Attributes:
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PHB66NQ03LT
Nexperia
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Datasheet
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PHB66NQ03LT
Nexperia
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Package Description | D2PAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-01 | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 66 A | |
Drain-source On Resistance-Max | 0.0136 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 228 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PHB66NQ03LT
This table gives cross-reference parts and alternative options found for PHB66NQ03LT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB66NQ03LT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHB66NQ03LT/T3 | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT vs PHB66NQ03LT/T3 |
934056840118 | TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT vs 934056840118 |
934056840118 | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT vs 934056840118 |
PHB66NQ03LT,118 | N-channel TrenchMOS logic level FET D2PAK 3-Pin | NXP Semiconductors | PHB66NQ03LT vs PHB66NQ03LT,118 |
PHB66NQ03LT/T3 | TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT vs PHB66NQ03LT/T3 |
PHB66NQ03LT | TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT vs PHB66NQ03LT |