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N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AK3511
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Newark | Mosfet Rohs Compliant: Yes |Nexperia PHB66NQ03LT,118 Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4180 / $0.5430 | Buy Now |
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Rochester Electronics | PHB66NQ03LT - N-channel TrenchMOS logic level FET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 8543 |
|
$0.3738 / $0.4398 | Buy Now |
DISTI #
PHB66NQ03LT.118
|
TME | Transistor: N-MOSFET, unipolar, 25V, 45A, 93W, D2PAK,SOT404 Min Qty: 1 | 0 |
|
$0.6240 / $0.9430 | RFQ |
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PHB66NQ03LT,118
Nexperia
Buy Now
Datasheet
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Compare Parts:
PHB66NQ03LT,118
Nexperia
N-channel TrenchMOS logic level FET@en-us D2PAK 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-01 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 66 A | |
Drain-source On Resistance-Max | 0.0136 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 228 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PHB66NQ03LT,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB66NQ03LT,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
PHB66NQ03LT/T3 | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT,118 vs PHB66NQ03LT/T3 |
934056840118 | TRANSISTOR 66 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT,118 vs 934056840118 |
934056840118 | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT,118 vs 934056840118 |
PHB66NQ03LT | Power Field-Effect Transistor | Nexperia | PHB66NQ03LT,118 vs PHB66NQ03LT |
PHB66NQ03LT,118 | N-channel TrenchMOS logic level FET D2PAK 3-Pin | NXP Semiconductors | PHB66NQ03LT,118 vs PHB66NQ03LT,118 |
PHB66NQ03LT/T3 | TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT,118 vs PHB66NQ03LT/T3 |
PHB66NQ03LT | TRANSISTOR 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | PHB66NQ03LT,118 vs PHB66NQ03LT |