Datasheets
NT5DS16M8AT-6 by: Nanya Technology Corporation

DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66

Part Details for NT5DS16M8AT-6 by Nanya Technology Corporation

Overview of NT5DS16M8AT-6 by Nanya Technology Corporation

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for NT5DS16M8AT-6

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NT5DS16M8AT-6 Part Data Attributes

NT5DS16M8AT-6 Nanya Technology Corporation
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NT5DS16M8AT-6 Nanya Technology Corporation DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP
Part Package Code TSOP2
Package Description TSOP2, TSSOP66,.46
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR3 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.015 A
Supply Current-Max 0.17 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for NT5DS16M8AT-6

This table gives cross-reference parts and alternative options found for NT5DS16M8AT-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5DS16M8AT-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C2128804SBI6 DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc NT5DS16M8AT-6 vs V58C2128804SBI6
V58C2128804SBLE6 DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc NT5DS16M8AT-6 vs V58C2128804SBLE6
V58C2128804SBLT6 DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc NT5DS16M8AT-6 vs V58C2128804SBLT6
Part Number Description Manufacturer Compare
MT46V16M8P-6IT:A DDR DRAM, 16MX8, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc NT5DS16M8AT-6 vs MT46V16M8P-6IT:A
V58C2128804SBLI6I DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc NT5DS16M8AT-6 vs V58C2128804SBLI6I
MT46V16M8P-6:D DDR DRAM, 16MX8, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc NT5DS16M8AT-6 vs MT46V16M8P-6:D
MT46V16M8TG-5 DDR DRAM, 16MX8, 0.6ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc NT5DS16M8AT-6 vs MT46V16M8TG-5
HYB25D128800ATL-8 DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG NT5DS16M8AT-6 vs HYB25D128800ATL-8
MT46V16M8TG-5BLIT:D DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc NT5DS16M8AT-6 vs MT46V16M8TG-5BLIT:D
MT46V16M8P-5BL DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc NT5DS16M8AT-6 vs MT46V16M8P-5BL
HYB25D128800E-8 DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Infineon Technologies AG NT5DS16M8AT-6 vs HYB25D128800E-8
V58C2128804SCI5 DDR DRAM, 16MX8, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc NT5DS16M8AT-6 vs V58C2128804SCI5
HY5DV1298022ATC-80 DDR DRAM, 16MX8, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc NT5DS16M8AT-6 vs HY5DV1298022ATC-80

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