Memory
NT256D72S89B0GU-75B
Nanya Technology Corporation
Description: DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184

Overview of NT256D72S89B0GU-75B by Nanya Technology Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Computing and Data Storage Financial Technology (Fintech) Energy and Power Systems

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Part Data Attributes for NT256D72S89B0GU-75B by Nanya Technology Corporation

NT256D72S89B0GU-75B
Nanya Technology Corporation
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NANYA TECHNOLOGY CORP
Part Package Code
DIMM
Package Description
DIMM, DIMM184
Pin Count
184
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Mode
SINGLE BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N184
JESD-609 Code
e4
Memory Density
2415919104 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
72
Number of Functions
1
Number of Ports
1
Number of Terminals
184
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX72
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM184
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
8192
Self Refresh
YES
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
GOLD
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
DUAL
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  1. NT256D72S89B0GU-75B
    Nanya Technology Corporation
    DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184
    VS

Alternate Parts for NT256D72S89B0GU-75B

This table gives cross-reference parts and alternative options found for NT256D72S89B0GU-75B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT256D72S89B0GU-75B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
M312L3223BT0-CB0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M312L3223BT0-CB0
M383L3223DTS-CA2 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M383L3223DTS-CA2
M383L3223DTS-CB0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M383L3223DTS-CB0
M312L3223BT0-CA2 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M312L3223BT0-CA2
M383L3223DTS-LA2 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M383L3223DTS-LA2
M383L3223BT1-CB0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M383L3223BT1-CB0
HYS72D32300GBR-7-B DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Infineon Technologies AG NT256D72S89B0GU-75B vs HYS72D32300GBR-7-B
M312L3223DG0-CB0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M312L3223DG0-CB0
M383L3223CT1-CB0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M383L3223CT1-CB0
M312L3223ETS-CA2 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M312L3223ETS-CA2
Part Number Description Manufacturer Compare
M381L3313BT1-CB0 DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M381L3313BT1-CB0
MT5VDDT1672LAG-262XX DDR DRAM Module, 16MX72, 0.75ns, CMOS, DIMM-184 Micron Technology Inc NT256D72S89B0GU-75B vs MT5VDDT1672LAG-262XX
M381L3313BT0-CA0 DDR DRAM Module, 32MX72, 0.8ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M381L3313BT0-CA0
KMM381L3223AT-FY DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs KMM381L3223AT-FY
M383C1713FTS-CB3 DDR DRAM Module, 16MX72, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M383C1713FTS-CB3
KMM383L1713BT-FZ DDR DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs KMM383L1713BT-FZ
HYMD232726D8J-D4 DDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184 SK Hynix Inc NT256D72S89B0GU-75B vs HYMD232726D8J-D4
M381L3223BT0-LB0 Synchronous DRAM Module, 32MX72, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor NT256D72S89B0GU-75B vs M381L3223BT0-LB0
V827432U24SATLD0 DDR DRAM Module, 32MX72, 0.55ns, CMOS, DIMM-184 ProMOS Technologies Inc NT256D72S89B0GU-75B vs V827432U24SATLD0
V827432K24SAIG-D3 DDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184 ProMOS Technologies Inc NT256D72S89B0GU-75B vs V827432K24SAIG-D3

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