Part Details for NT256D64S88B1GY-5 by Nanya Technology Corporation
Overview of NT256D64S88B1GY-5 by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for NT256D64S88B1GY-5
NT256D64S88B1GY-5 CAD Models
NT256D64S88B1GY-5 Part Data Attributes
|
|
NT256D64S88B1GY-5
Nanya Technology Corporation
Buy Now
Datasheet
|
Compare Parts:
NT256D64S88B1GY-5
Nanya Technology Corporation
DDR DRAM Module, 32MX64, 0.6ns, CMOS, LEAD FREE, DIMM-184
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM184 | |
| Pin Count | 184 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 0.6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N184 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 184 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.128 A | |
| Supply Current-Max | 2.8 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Supply Voltage-Nom (Vsup) | 2.6 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for NT256D64S88B1GY-5
This table gives cross-reference parts and alternative options found for NT256D64S88B1GY-5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT256D64S88B1GY-5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| V826532K04SATG-A1 | DDR DRAM Module, 32MX64, 0.8ns, CMOS, DIMM-184 | Mosel Vitelic Corporation | NT256D64S88B1GY-5 vs V826532K04SATG-A1 |
| HYMD232646C8-H | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | SK Hynix Inc | NT256D64S88B1GY-5 vs HYMD232646C8-H |
| M470L3324DU0-CB3 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | NT256D64S88B1GY-5 vs M470L3324DU0-CB3 |
| M470L3224DT0-CA0 | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | Samsung Semiconductor | NT256D64S88B1GY-5 vs M470L3224DT0-CA0 |
| HYMD232M646DL6-K | DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | NT256D64S88B1GY-5 vs HYMD232M646DL6-K |
| M368L3313BT0-CA2 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, UDIMM-184 | Samsung Semiconductor | NT256D64S88B1GY-5 vs M368L3313BT0-CA2 |
| W3EG6432S335D4G | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | Microsemi Corporation | NT256D64S88B1GY-5 vs W3EG6432S335D4G |
| MT8VDDT3264HG-202XX | DDR DRAM Module, 32MX64, 0.8ns, CMOS, MO-224, SODIMM-200 | Micron Technology Inc | NT256D64S88B1GY-5 vs MT8VDDT3264HG-202XX |
| HYMD532M646L6-H | DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200 | SK Hynix Inc | NT256D64S88B1GY-5 vs HYMD532M646L6-H |
| HYMD232M646CLF6-L | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | SK Hynix Inc | NT256D64S88B1GY-5 vs HYMD232M646CLF6-L |