Part Details for W3EG6432S335D4G by Microsemi Corporation
Overview of W3EG6432S335D4G by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for W3EG6432S335D4G
W3EG6432S335D4G CAD Models
W3EG6432S335D4G Part Data Attributes
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W3EG6432S335D4G
Microsemi Corporation
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Datasheet
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W3EG6432S335D4G
Microsemi Corporation
DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SO-DIMM-200
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | MODULE | |
Package Description | DIMM, | |
Pin Count | 200 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XDMA-N200 | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX64 | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for W3EG6432S335D4G
This table gives cross-reference parts and alternative options found for W3EG6432S335D4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W3EG6432S335D4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V826532K04SATG-A1 | DDR DRAM Module, 32MX64, 0.8ns, CMOS, DIMM-184 | Mosel Vitelic Corporation | W3EG6432S335D4G vs V826532K04SATG-A1 |
HYMD232646C8-H | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | SK Hynix Inc | W3EG6432S335D4G vs HYMD232646C8-H |
M470L3324DU0-CB3 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | W3EG6432S335D4G vs M470L3324DU0-CB3 |
M470L3224DT0-CA0 | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | Samsung Semiconductor | W3EG6432S335D4G vs M470L3224DT0-CA0 |
HYMD232M646DL6-K | DDR DRAM Module, 32MX64, 0.75ns, CMOS, SODIMM-200 | SK Hynix Inc | W3EG6432S335D4G vs HYMD232M646DL6-K |
M368L3313BT0-CA2 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, UDIMM-184 | Samsung Semiconductor | W3EG6432S335D4G vs M368L3313BT0-CA2 |
MT8VDDT3264HG-202XX | DDR DRAM Module, 32MX64, 0.8ns, CMOS, MO-224, SODIMM-200 | Micron Technology Inc | W3EG6432S335D4G vs MT8VDDT3264HG-202XX |
HYMD532M646L6-H | DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200 | SK Hynix Inc | W3EG6432S335D4G vs HYMD532M646L6-H |
HYMD232M646CLF6-L | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | SK Hynix Inc | W3EG6432S335D4G vs HYMD232M646CLF6-L |
M368L3313BT1-CB0 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, DIMM-184 | Samsung Semiconductor | W3EG6432S335D4G vs M368L3313BT1-CB0 |