Datasheets
NGB8206NT4 by:

N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 800-REEL

Part Details for NGB8206NT4 by onsemi

Overview of NGB8206NT4 by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for NGB8206NT4

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NGB8206NT4 Part Data Attributes

NGB8206NT4 onsemi
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NGB8206NT4 onsemi N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 800-REEL
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SFM
Package Description CASE 418B-04, D2PAK-3
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature VOLTAGE CLAMPING
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 390 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Fall Time-Max (tf) 14000 ns
Gate-Emitter Thr Voltage-Max 2.3 V
Gate-Emitter Voltage-Max 15 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Rise Time-Max (tr) 8000 ns
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 18500 ns
Turn-on Time-Nom (ton) 6500 ns

Alternate Parts for NGB8206NT4

This table gives cross-reference parts and alternative options found for NGB8206NT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NGB8206NT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NGB8206NT4G N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 800-REEL onsemi NGB8206NT4 vs NGB8206NT4G
Part Number Description Manufacturer Compare
NGB8206NSL3 TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor onsemi NGB8206NT4 vs NGB8206NSL3
NGB8206NTF4 20A, 390V, N-CHANNEL IGBT, CASE 418B-04, D2PAK-3 onsemi NGB8206NT4 vs NGB8206NTF4
NGB8206NSL3G 20A, 390V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3 onsemi NGB8206NT4 vs NGB8206NSL3G
NGB8206NG N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 50-TUBE onsemi NGB8206NT4 vs NGB8206NG
NGB8206NT4G N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 800-REEL onsemi NGB8206NT4 vs NGB8206NT4G

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