Datasheets
NGB8206NT4G by:

N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 800-REEL

Part Details for NGB8206NT4G by onsemi

Overview of NGB8206NT4G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NGB8206NT4G

Part # Distributor Description Stock Price Buy
DISTI # 74AK0130
Newark Ngb8206Nt4G, Single Bipolar Transistors |Onsemi NGB8206NT4G RoHS: Not Compliant Min Qty: 310 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $1.6500
  • 500 $1.5300
  • 1,000 $1.3700
  • 2,500 $1.1100
  • 5,000 $1.0700
$1.0700 / $1.6500 Buy Now
DISTI # 2156-NGB8206NT4G-OS-ND
DigiKey IGNITION IGBT 20 A, 350 V, N-CHA Min Qty: 254 Lead time: 28 Weeks Container: Bulk MARKETPLACE PRODUCT 892
In Stock
  • 254 $1.1900
$1.1900 Buy Now
DISTI # NGB8206NT4G
Avnet Americas Trans IGBT Chip N-CH 390V 20A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NGB8206NT4G) RoHS: Compliant Min Qty: 306 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 892 Partner Stock
  • 306 $1.2123
  • 310 $1.1795
  • 620 $1.1467
  • 1,600 $1.1140
  • 3,100 $1.0812
  • 16,000 $1.0485
  • 31,000 $1.0157
$1.0157 / $1.2123 Buy Now
Rochester Electronics NGB8206 - Insulated Gate Bipolar Transistor, 20A, 390V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 892
  • 1 $1.1900
  • 25 $1.1700
  • 100 $1.1200
  • 500 $1.0800
  • 1,000 $1.0200
$1.0200 / $1.1900 Buy Now
ComSIT USA 20 A, 350 V, N-CHANNEL D2PAK IGNITION IGBT Insulated Gate Bipolar Transistor, 20A I(C), 390V V(BR)CES, N-Channel RoHS: Compliant Stock EU - 150
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for NGB8206NT4G

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NGB8206NT4G Part Data Attributes

NGB8206NT4G onsemi
Buy Now Datasheet
Compare Parts:
NGB8206NT4G onsemi N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 800-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ONSEMI
Part Package Code SFM
Package Description LEAD FREE, CASE 418B-04, D2PAK-3
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature VOLTAGE CLAMPING
Case Connection COLLECTOR
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 390 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Fall Time-Max (tf) 14000 ns
Gate-Emitter Thr Voltage-Max 2.1 V
Gate-Emitter Voltage-Max 15 V
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Rise Time-Max (tr) 8000 ns
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 18500 ns
Turn-on Time-Nom (ton) 6500 ns

Alternate Parts for NGB8206NT4G

This table gives cross-reference parts and alternative options found for NGB8206NT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NGB8206NT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NGB8206NSL3 TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor onsemi NGB8206NT4G vs NGB8206NSL3
NGB8206NTF4 20A, 390V, N-CHANNEL IGBT, CASE 418B-04, D2PAK-3 onsemi NGB8206NT4G vs NGB8206NTF4
NGB8206NSL3G 20A, 390V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3 onsemi NGB8206NT4G vs NGB8206NSL3G
NGB8206NG N-Channel Ignition IGBT 20 A, 350 V, D2PAK 2 LEAD, 50-TUBE onsemi NGB8206NT4G vs NGB8206NG

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