Datasheets
NE6500379A by:

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, 79A, 4 PIN

Part Details for NE6500379A by California Eastern Laboratories (CEL)

Overview of NE6500379A by California Eastern Laboratories (CEL)

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for NE6500379A

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NE6500379A Part Data Attributes:

NE6500379A California Eastern Laboratories (CEL)
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NE6500379A California Eastern Laboratories (CEL) RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, 79A, 4 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer CALIFORNIA EASTERN LABORATORIES
Package Description FLATPACK, R-PQFP-F4
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 5.6 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band S BAND
JESD-30 Code R-PQFP-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLATPACK
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position QUAD
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for NE6500379A

This table gives cross-reference parts and alternative options found for NE6500379A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE6500379A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE6500379A-T1 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, 79A, 4 PIN California Eastern Laboratories (CEL) NE6500379A vs NE6500379A-T1
NE6500379A RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group NE6500379A vs NE6500379A
Part Number Description Manufacturer Compare
NE5500179A-T1-A RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, 79A, 4 PIN NEC Electronics Group NE6500379A vs NE5500179A-T1-A
NE960R275-A RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN NEC Electronics Group NE6500379A vs NE960R275-A
FLU35XM RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, SMT, CASE XM, 4 PIN SUMITOMO ELECTRIC Industries Ltd NE6500379A vs FLU35XM
NE5510179A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET NEC Electronics Group NE6500379A vs NE5510179A
NE5510179A-T1 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN California Eastern Laboratories (CEL) NE6500379A vs NE5510179A-T1
CFH2162-P1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET Mimix Broadband NE6500379A vs CFH2162-P1
NE6500496 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) NE6500379A vs NE6500496
NE6500496-A RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET NEC Electronics Group NE6500379A vs NE6500496-A
CFH2162-P5 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET MACOM NE6500379A vs CFH2162-P5
NE6510179A-T1 RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, 79A, 4 PIN California Eastern Laboratories (CEL) NE6500379A vs NE6510179A-T1

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