Part Details for CFH2162-P5 by MACOM
Overview of CFH2162-P5 by MACOM
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CFH2162-P5
CFH2162-P5 CAD Models
CFH2162-P5 Part Data Attributes
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CFH2162-P5
MACOM
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Datasheet
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CFH2162-P5
MACOM
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | CELERITEK INC | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 2.8 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 10 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for CFH2162-P5
This table gives cross-reference parts and alternative options found for CFH2162-P5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFH2162-P5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE6500496-A | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | CFH2162-P5 vs NE6500496-A |
NE5520279A-T1A-A | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN | NEC Electronics Group | CFH2162-P5 vs NE5520279A-T1A-A |
NE5510179A-T1-A | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | NEC Electronics Group | CFH2162-P5 vs NE5510179A-T1-A |
FLU35XM | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE XM, 3 PIN | FUJITSU Limited | CFH2162-P5 vs FLU35XM |
NE5500179A-T1 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | Renesas Electronics Corporation | CFH2162-P5 vs NE5500179A-T1 |
NE6510179A-T1-A | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN | NEC Electronics Group | CFH2162-P5 vs NE6510179A-T1-A |
NE6500496 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | CFH2162-P5 vs NE6500496 |
CFH2162-P1 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET | Mimix Broadband | CFH2162-P5 vs CFH2162-P1 |
S9G07A | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, JFET, 2-5M1A, 3 PIN, FET RF Power | Toshiba America Electronic Components | CFH2162-P5 vs S9G07A |
NE6500379A | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, 79A, 4 PIN | California Eastern Laboratories (CEL) | CFH2162-P5 vs NE6500379A |