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Transistors / RF Power Field-Effect Transistors / CFH2162-P5
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CFH2162-P5 by:

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET

Part Details for CFH2162-P5 by MACOM

Overview of CFH2162-P5 by MACOM

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Part Details for CFH2162-P5

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CFH2162-P5 Part Data Attributes

Parametric Data
CFH2162-P5 MACOM
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CFH2162-P5 MACOM RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
Part Life Cycle Code Transferred
Ihs Manufacturer CELERITEK INC
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 2.8 A
FET Technology JUNCTION
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 10 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for CFH2162-P5

This table gives cross-reference parts and alternative options found for CFH2162-P5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFH2162-P5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE6500379A-T1-A RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN NEC Electronics Group CFH2162-P5 vs NE6500379A-T1-A
NE5520279A-T1A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN NEC Electronics Group CFH2162-P5 vs NE5520279A-T1A
FLL351ME RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Limited CFH2162-P5 vs FLL351ME
NE6510179A-T1-A RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN NEC Electronics Group CFH2162-P5 vs NE6510179A-T1-A
NE6500496 RF Power Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel, NEC Electronics America Inc CFH2162-P5 vs NE6500496
NE5500179A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET NEC Electronics Group CFH2162-P5 vs NE5500179A
NE5520279A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN NEC Electronics Group CFH2162-P5 vs NE5520279A
NE6510179A-TI RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET NEC Electronics Group CFH2162-P5 vs NE6510179A-TI
FLU35XM RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited CFH2162-P5 vs FLU35XM
NE5510179A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET NEC Electronics Group CFH2162-P5 vs NE5510179A

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