Datasheets
NE5510179A by:

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Part Details for NE5510179A by NEC Electronics Group

Overview of NE5510179A by NEC Electronics Group

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Applications Education and Research Industrial Automation Electronic Manufacturing

Part Details for NE5510179A

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NE5510179A Part Data Attributes

NE5510179A NEC Electronics Group
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NE5510179A NEC Electronics Group RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer NEC ELECTRONICS CORP
Package Description MICROWAVE, R-PQMW-F4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-PQMW-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style MICROWAVE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position QUAD
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for NE5510179A

This table gives cross-reference parts and alternative options found for NE5510179A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE5510179A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NE5510179A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, NEC Compound Semiconductor Devices Ltd NE5510179A vs NE5510179A
NE5510179A-T1 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET NEC Electronics Group NE5510179A vs NE5510179A-T1
Part Number Description Manufacturer Compare
NE5520279A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN NEC Electronics Group NE5510179A vs NE5520279A
CFH2162-P1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET Mimix Broadband NE5510179A vs CFH2162-P1
NE5500179A-T1 RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Renesas Electronics Corporation NE5510179A vs NE5500179A-T1
FLL351ME L BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited NE5510179A vs FLL351ME
NE6500379A-T1-A RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET Renesas Electronics Corporation NE5510179A vs NE6500379A-T1-A
NE6500278 RF Power Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel, NEC Electronics America Inc NE5510179A vs NE6500278
NE5500179A RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET NEC Electronics Group NE5510179A vs NE5500179A
CFH2162-P1 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Junction FET MACOM NE5510179A vs CFH2162-P1
NE5500179A-T1-A RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 5.70 X 5.70 MM, 1.10 MM HEIGHT, 79A, 4 PIN NEC Electronics Group NE5510179A vs NE5500179A-T1-A
NE5500179A-T1 RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN NEC Electronics America Inc NE5510179A vs NE5500179A-T1

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