Part Details for NE5510179A by NEC Electronics Group
Overview of NE5510179A by NEC Electronics Group
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NE5510179A
NE5510179A CAD Models
NE5510179A Part Data Attributes
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NE5510179A
NEC Electronics Group
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Datasheet
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NE5510179A
NEC Electronics Group
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Package Description | MICROWAVE, R-PQMW-F4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 0.5 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-PQMW-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | QUAD | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for NE5510179A
This table gives cross-reference parts and alternative options found for NE5510179A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE5510179A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NE5510179A | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | NEC Compound Semiconductor Devices Ltd | NE5510179A vs NE5510179A |
NE5510179A-T1 | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | NEC Electronics Group | NE5510179A vs NE5510179A-T1 |