Part Details for NE33200 by California Eastern Laboratories (CEL)
Overview of NE33200 by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for NE33200
NE33200 CAD Models
NE33200 Part Data Attributes:
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NE33200
California Eastern Laboratories (CEL)
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Datasheet
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NE33200
California Eastern Laboratories (CEL)
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 4 V | |
| Drain Current-Max (ID) | 0.08 A | |
| FET Technology | HETERO-JUNCTION | |
| Highest Frequency Band | X BAND | |
| JESD-30 Code | R-XUUC-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 9.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for NE33200
This table gives cross-reference parts and alternative options found for NE33200. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE33200, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE321000 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Electronics America Inc | NE33200 vs NE321000 |
| NE321000 | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Silicon, N-Channel, Hetero-junction FET | NEC Electronics Group | NE33200 vs NE321000 |
| FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | FUJITSU Limited | NE33200 vs FHX05X |
| NE32400N | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-3 | NEC Electronics America Inc | NE33200 vs NE32400N |
| NE32500M | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Compound Semiconductor Devices Ltd | NE33200 vs NE32500M |
| NE38018-A | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, SUPERMINI-4 | Renesas Electronics Corporation | NE33200 vs NE38018-A |
| FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | SUMITOMO ELECTRIC Device Innovations Inc | NE33200 vs FHX05X |
| NE38018-T1-A | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | NE33200 vs NE38018-T1-A |
| NE32400M | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 | California Eastern Laboratories (CEL) | NE33200 vs NE32400M |
| NE76000L | RF Small Signal Field-Effect Transistor, 2-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | NEC Electronics America Inc | NE33200 vs NE76000L |