NE33200
vs
NE76000L
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
NEC ELECTRONICS AMERICA INC
|
| Part Package Code |
DIE
|
|
| Package Description |
UNCASED CHIP, R-XUUC-N4
|
|
| Pin Count |
4
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY
|
LOW NOISE, HIGH RELIABILITY
|
| Configuration |
SINGLE
|
|
| DS Breakdown Voltage-Min |
4 V
|
5 V
|
| Drain Current-Max (ID) |
0.08 A
|
|
| FET Technology |
HETERO-JUNCTION
|
METAL SEMICONDUCTOR
|
| Highest Frequency Band |
X BAND
|
KU BAND
|
| JESD-30 Code |
R-XUUC-N4
|
R-XUUC-N3
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
4
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Gain-Min (Gp) |
9.5 dB
|
8 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
GALLIUM ARSENIDE
|
| Base Number Matches |
3
|
1
|
|
|
|
Compare NE33200 with alternatives
Compare NE76000L with alternatives