Part Details for MTW4N80E by Motorola Mobility LLC
Overview of MTW4N80E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Healthcare
Medical Imaging
Part Details for MTW4N80E
MTW4N80E CAD Models
MTW4N80E Part Data Attributes:
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MTW4N80E
Motorola Mobility LLC
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Datasheet
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MTW4N80E
Motorola Mobility LLC
4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for MTW4N80E
This table gives cross-reference parts and alternative options found for MTW4N80E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW4N80E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD1N40-1 | 1A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | Motorola Mobility LLC | MTW4N80E vs MTD1N40-1 |
| IRF3710PBF | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | MTW4N80E vs IRF3710PBF |
| AUIRF1010EZL | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | International Rectifier | MTW4N80E vs AUIRF1010EZL |
| IRL2505STRLPBF | Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK , 3 PIN | International Rectifier | MTW4N80E vs IRL2505STRLPBF |
| AUIRFZ48ZS | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | MTW4N80E vs AUIRFZ48ZS |
| AUIRF3710ZSTRR | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 | International Rectifier | MTW4N80E vs AUIRF3710ZSTRR |
| IRF1405STRLPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | MTW4N80E vs IRF1405STRLPBF |
| AUIRF1405ZSTRL | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | MTW4N80E vs AUIRF1405ZSTRL |
| AUIRFZ48ZSTRR | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | MTW4N80E vs AUIRFZ48ZSTRR |
| IRF452 | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,11A I(D),TO-3 | Intersil Corporation | MTW4N80E vs IRF452 |