Datasheets
MT47H16M16BG-3:B by:

DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84

Part Details for MT47H16M16BG-3:B by Micron Technology Inc

Overview of MT47H16M16BG-3:B by Micron Technology Inc

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Price & Stock for MT47H16M16BG-3:B

Part # Distributor Description Stock Price Buy
DISTI # MT47H16M16BG-3:B
Avnet Americas DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray - Trays (Alt: MT47H16M16BG-3:B) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tray 0
RFQ
Bristol Electronics   16
RFQ
Bristol Electronics   302
RFQ
Quest Components 16M X 16 DDR DRAM, 0.45 ns, PBGA84 141
  • 1 $13.2469
  • 22 $10.8919
  • 93 $10.3031
$10.3031 / $13.2469 Buy Now
DISTI # MT47H16M16BG-3:B
Avnet Americas DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray - Trays (Alt: MT47H16M16BG-3:B) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Tray 0
RFQ
Chip1Cloud IC SDRAM 256MBIT 333MHZ 84FBGA 4880
RFQ

Part Details for MT47H16M16BG-3:B

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MT47H16M16BG-3:B Part Data Attributes:

MT47H16M16BG-3:B Micron Technology Inc
Buy Now Datasheet
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MT47H16M16BG-3:B Micron Technology Inc DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description 8 X 14 MM, ROHS COMPLIANT, FBGA-84
Pin Count 84
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.45 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B84
JESD-609 Code e1
Length 14 mm
Memory Density 268435456 bit
Memory IC Type DDR2 DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 84
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 16MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA84,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.18 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 8 mm

Alternate Parts for MT47H16M16BG-3:B

This table gives cross-reference parts and alternative options found for MT47H16M16BG-3:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H16M16BG-3:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYI18T256160AC-3S DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, PLASTIC, TFBGA-84 Qimonda AG MT47H16M16BG-3:B vs HYI18T256160AC-3S
MT47H16M16BG-3IT:BTR DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16BG-3IT:BTR
MT47H16M16BG-3AT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16BG-3AT:B
MT47H16M16BG-3L:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16BG-3L:B
MT47H16M16BG-3LIT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16BG-3LIT:B
MT47H16M16FG-3IT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16FG-3IT:B
MT47H16M16FG-3LIT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16FG-3LIT:B
Part Number Description Manufacturer Compare
MT47H16M16FG-37E:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16FG-37E:B
HYB18T256160AC-3 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 12.50 X 10 MM, MO-207DK-Z, FBGA-84 Infineon Technologies AG MT47H16M16BG-3:B vs HYB18T256160AC-3
EDE2516ABSE-6C-E DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Elpida Memory Inc MT47H16M16BG-3:B vs EDE2516ABSE-6C-E
MT47H16M16BG-3LIT:B DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 14 MM, ROHS COMPLIANT, FBGA-84 Micron Technology Inc MT47H16M16BG-3:B vs MT47H16M16BG-3LIT:B
EDE2516AASE-6E-E DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84 Elpida Memory Inc MT47H16M16BG-3:B vs EDE2516AASE-6E-E
K4N56163QF-GC2A0 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H16M16BG-3:B vs K4N56163QF-GC2A0
EDE2516AASE-BE-E DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, LEAD FREE, FBGA-84 Elpida Memory Inc MT47H16M16BG-3:B vs EDE2516AASE-BE-E
HY5PS561621LF-Y6 DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 SK Hynix Inc MT47H16M16BG-3:B vs HY5PS561621LF-Y6
IS43DR16160A-3DBL DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-84 Integrated Silicon Solution Inc MT47H16M16BG-3:B vs IS43DR16160A-3DBL
K4N56163QF-ZC2A DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, FBGA-84 Samsung Semiconductor MT47H16M16BG-3:B vs K4N56163QF-ZC2A

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