There are no models available for this part yet.
Overview of MT16VDDF12864HY-40BJ1 by Micron Technology Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Computing and Data Storage
CAD Models for MT16VDDF12864HY-40BJ1 by Micron Technology Inc
Part Data Attributes for MT16VDDF12864HY-40BJ1 by Micron Technology Inc
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
MICRON TECHNOLOGY INC
|
Package Description
|
DIMM, DIMM200,24
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8542.32.00.36
|
Access Time-Max
|
0.7 ns
|
Clock Frequency-Max (fCLK)
|
200 MHz
|
I/O Type
|
COMMON
|
JESD-30 Code
|
R-PDMA-N200
|
JESD-609 Code
|
e3
|
Memory Density
|
8589934592 bit
|
Memory IC Type
|
DDR DRAM MODULE
|
Memory Width
|
64
|
Moisture Sensitivity Level
|
1
|
Number of Terminals
|
200
|
Number of Words
|
134217728 words
|
Number of Words Code
|
128000000
|
Operating Temperature-Max
|
70 °C
|
Operating Temperature-Min
|
|
Organization
|
128MX64
|
Output Characteristics
|
3-STATE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
DIMM
|
Package Equivalence Code
|
DIMM200,24
|
Package Shape
|
RECTANGULAR
|
Package Style
|
MICROELECTRONIC ASSEMBLY
|
Qualification Status
|
Not Qualified
|
Refresh Cycles
|
8192
|
Standby Current-Max
|
0.08 A
|
Supply Current-Max
|
5.52 mA
|
Supply Voltage-Nom (Vsup)
|
2.6 V
|
Surface Mount
|
NO
|
Technology
|
CMOS
|
Temperature Grade
|
COMMERCIAL
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
NO LEAD
|
Terminal Pitch
|
0.6 mm
|
Terminal Position
|
DUAL
|
Alternate Parts for MT16VDDF12864HY-40BJ1
This table gives cross-reference parts and alternative options found for MT16VDDF12864HY-40BJ1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDF12864HY-40BJ1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
M470L2923DV0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BJ1 vs M470L2923DV0-CB3 |
EBD11UD8ADDA-6B | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Elpida Memory Inc | MT16VDDF12864HY-40BJ1 vs EBD11UD8ADDA-6B |
M470L2923BN0-CB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BJ1 vs M470L2923BN0-CB3 |
M470L2923BN0-LCC | DDR DRAM Module, 128MX64, 0.65ns, CMOS, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BJ1 vs M470L2923BN0-LCC |
V826765G24SAJW-D3 | DDR DRAM Module, 128MX64, 0.65ns, CMOS, GREEN, SODIMM-200 | ProMOS Technologies Inc | MT16VDDF12864HY-40BJ1 vs V826765G24SAJW-D3 |
M470L2923DV0-LB3 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BJ1 vs M470L2923DV0-LB3 |
M470L2923DV0-CCC | DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BJ1 vs M470L2923DV0-CCC |
V826765G24SAJW-C0 | DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, SODIMM-200 | ProMOS Technologies Inc | MT16VDDF12864HY-40BJ1 vs V826765G24SAJW-C0 |
M470L2923BN0-CCC | DDR DRAM Module, 128MX64, 0.65ns, CMOS, SODIMM-200 | Samsung Semiconductor | MT16VDDF12864HY-40BJ1 vs M470L2923BN0-CCC |
HYMD512M646BLFP8-D43 | DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | MT16VDDF12864HY-40BJ1 vs HYMD512M646BLFP8-D43 |
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