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Memory DRAMs MT16VDDF12864HY-40BJ1

MT16VDDF12864HY-40BJ1
Micron Technology Inc
Description: DDR DRAM Module, 128MX64, 0.7ns, CMOS, PDMA200

Overview of MT16VDDF12864HY-40BJ1 by Micron Technology Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 crosses )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 crosses )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Computing and Data Storage

CAD Models for MT16VDDF12864HY-40BJ1 by Micron Technology Inc
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Part Data Attributes for MT16VDDF12864HY-40BJ1 by Micron Technology Inc
Parametric Data

MT16VDDF12864HY-40BJ1
Micron Technology Inc
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICRON TECHNOLOGY INC
Package Description
DIMM, DIMM200,24
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.36
Access Time-Max
0.7 ns
Clock Frequency-Max (fCLK)
200 MHz
I/O Type
COMMON
JESD-30 Code
R-PDMA-N200
JESD-609 Code
e3
Memory Density
8589934592 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
64
Moisture Sensitivity Level
1
Number of Terminals
200
Number of Words
134217728 words
Number of Words Code
128000000
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
128MX64
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
DIMM
Package Equivalence Code
DIMM200,24
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
8192
Standby Current-Max
0.08 A
Supply Current-Max
5.52 mA
Supply Voltage-Nom (Vsup)
2.6 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
MATTE TIN
Terminal Form
NO LEAD
Terminal Pitch
0.6 mm
Terminal Position
DUAL
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  1. MT16VDDF12864HY-40BJ1
    Micron Technology Inc
    DDR DRAM Module, 128MX64, 0.7ns, CMOS, PDMA200
    VS

Alternate Parts for MT16VDDF12864HY-40BJ1

This table gives cross-reference parts and alternative options found for MT16VDDF12864HY-40BJ1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT16VDDF12864HY-40BJ1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
M470L2923DV0-CB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923DV0-CB3
EBD11UD8ADDA-6B DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 Elpida Memory Inc MT16VDDF12864HY-40BJ1 vs EBD11UD8ADDA-6B
M470L2923BN0-CB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923BN0-CB3
M470L2923BN0-LCC DDR DRAM Module, 128MX64, 0.65ns, CMOS, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923BN0-LCC
V826765G24SAJW-D3 DDR DRAM Module, 128MX64, 0.65ns, CMOS, GREEN, SODIMM-200 ProMOS Technologies Inc MT16VDDF12864HY-40BJ1 vs V826765G24SAJW-D3
M470L2923DV0-LB3 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923DV0-LB3
M470L2923DV0-CCC DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923DV0-CCC
V826765G24SAJW-C0 DDR DRAM Module, 128MX64, 0.75ns, CMOS, GREEN, SODIMM-200 ProMOS Technologies Inc MT16VDDF12864HY-40BJ1 vs V826765G24SAJW-C0
M470L2923BN0-CCC DDR DRAM Module, 128MX64, 0.65ns, CMOS, SODIMM-200 Samsung Semiconductor MT16VDDF12864HY-40BJ1 vs M470L2923BN0-CCC
HYMD512M646BLFP8-D43 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, SODIMM-200 SK Hynix Inc MT16VDDF12864HY-40BJ1 vs HYMD512M646BLFP8-D43

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