MT16VDDF12864HY-40BJ1 vs M470L2923BN0-LCC feature comparison

MT16VDDF12864HY-40BJ1 Micron Technology Inc

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M470L2923BN0-LCC Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Package Description DIMM, DIMM200,24 DIMM, DIMM200,24
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.7 ns 0.65 ns
Clock Frequency-Max (fCLK) 200 MHz 200 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N200 R-XZMA-N200
JESD-609 Code e3 e0
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Moisture Sensitivity Level 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24 DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Standby Current-Max 0.08 A 0.08 A
Supply Current-Max 5.52 mA 4.2 mA
Supply Voltage-Nom (Vsup) 2.6 V 2.6 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish MATTE TIN TIN LEAD
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm 0.6 mm
Terminal Position DUAL ZIG-ZAG
Base Number Matches 1 1
Part Package Code SODIMM
Pin Count 200
Access Mode DUAL BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.5 V

Compare MT16VDDF12864HY-40BJ1 with alternatives

Compare M470L2923BN0-LCC with alternatives