Datasheets
MRF166W by:

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 412-01, 4 PIN

Part Details for MRF166W by MACOM

Overview of MRF166W by MACOM

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for MRF166W

Part # Distributor Description Stock Price Buy
DISTI # 1465-1162-ND
DigiKey RF MOSFET 28V 412-01 Min Qty: 40 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 40 $117.5392
$117.5392 Buy Now
DISTI # 937-MRF166W
Mouser Electronics RF MOSFET Transistors Transistor,40W,<500MHz,28V,TMOS RoHS: Compliant 0
  • 1 $126.0400
  • 10 $116.6800
  • 20 $112.4200
  • 60 $109.0000
$109.0000 / $126.0400 Order Now
DISTI # MRF166W
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 0
  • 1 $122.7200
$122.7200 Buy Now

Part Details for MRF166W

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MRF166W Part Data Attributes:

MRF166W MACOM
Buy Now Datasheet
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MRF166W MACOM RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 412-01, 4 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 4
Manufacturer Package Code CASE 412-01
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 175 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF166W

This table gives cross-reference parts and alternative options found for MRF166W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF166W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF166W 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 412-01, 4 PIN Motorola Mobility LLC MRF166W vs MRF166W
Part Number Description Manufacturer Compare
BLF245 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-123A, CERAMIC PACKAGE-4 NXP Semiconductors MRF166W vs BLF245
UF2815B UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT PACKAGE-6 TE Connectivity MRF166W vs UF2815B
MRF136 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN MACOM MRF166W vs MRF136
SD2904 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, PLASTIC, M113, 4 PIN STMicroelectronics MRF166W vs SD2904
MRF136 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN TE Connectivity MRF166W vs MRF136
DU2820S VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity MRF166W vs DU2820S
BLF245C TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power NXP Semiconductors MRF166W vs BLF245C
MRF137 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN TE Connectivity MRF166W vs MRF137
BLF244,112 BLF244 NXP Semiconductors MRF166W vs BLF244,112
DU2810S VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity MRF166W vs DU2810S

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