Parametric results for: MRF166W under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 3

4 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 3 Single 1

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

4 hits Apply

Drain Current-Max (ID) (1)

8 A 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

4 hits Apply

R-CDFM-F4 3

4 hits Apply

Manufacturer (4)

Freescale Semiconductor 1 MACOM 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1

4 hits Apply

Number of Elements (1)

2 3

4 hits Apply

Number of Terminals (1)

4 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

200.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

FLANGE MOUNT 3

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

175 W 2

4 hits Apply

175 W 1

4 hits Apply

Power Gain-Min (Gp) (1)

11.0 dB 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply