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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1465-1146-ND
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DigiKey | RF MOSFET 28V 211-07 Min Qty: 1 Lead time: 34 Weeks Container: Tray |
424 In Stock |
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$38.4042 / $49.1000 | Buy Now |
DISTI #
937-MRF136
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Mouser Electronics | RF MOSFET Transistors 5-400MHz 15Watts 28Volt Gain 16dB RoHS: Compliant | 2382 |
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$30.6300 / $40.6600 | Buy Now |
|
Bristol Electronics | 73 |
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RFQ | ||
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NexGen Digital | 1 |
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RFQ | ||
DISTI #
MRF136
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Richardson RFPD | RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 | 528 |
|
$41.5100 | Buy Now |
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MRF136
MACOM
Buy Now
Datasheet
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Compare Parts:
MRF136
MACOM
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 211-07, 4 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
Package Description | CASE 211-07, 4 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | CASE 211-07 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | MACOM | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 2.5 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | O-CRFM-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 55 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for MRF136. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF136, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MRF136Y | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 319B-02, 4 PIN | MACOM | MRF136 vs MRF136Y |
MRF136 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN | Motorola Mobility LLC | MRF136 vs MRF136 |
MRF136Y | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | Motorola Mobility LLC | MRF136 vs MRF136Y |
MRF136Y | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 319B-02, 4 PIN | TE Connectivity | MRF136 vs MRF136Y |
MRF136 | RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | MRF136 vs MRF136 |
BLF244 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, SOT-123A, 4 PIN, FET RF Power | NXP Semiconductors | MRF136 vs BLF244 |
MRF136 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-07, 4 PIN | TE Connectivity | MRF136 vs MRF136 |
BLF244,112 | BLF244 | NXP Semiconductors | MRF136 vs BLF244,112 |