Parametric results for: MRF136 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 4

13 hits Apply

Configuration (3)

COMMON SOURCE, 2 ELEMENTS 4 SINGLE 6 Single 1

13 hits Apply

DS Breakdown Voltage-Min (1)

65 V 11

13 hits Apply

Drain Current-Max (Abs) (ID) (1)

2.5 A 1

13 hits Apply

Drain Current-Max (ID) (2)

2.5 A 6 5 A 6

Min (A) - Max (A)

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 11

13 hits Apply

O-CRFM-F4 5 R-CDFM-F4 4

13 hits Apply

e0 2

13 hits Apply

Manufacturer (7)

Advanced Semiconductor Inc 2 Freescale Semiconductor 1 MACOM 2 Motorola Mobility LLC 2 Motorola Semiconductor Products 2 New Jersey Semiconductor Products Inc 2 TE Connectivity 2

13 hits Apply

Number of Elements (2)

1 6 2 5

Min - Max

13 hits Apply

Number of Terminals (1)

4 9

13 hits Apply

ENHANCEMENT MODE 12

13 hits Apply

200.0 °C 9

13 hits Apply

CERAMIC, METAL-SEALED COFIRED 9

13 hits Apply

RECTANGULAR 4 ROUND 5

13 hits Apply

FLANGE MOUNT 9

13 hits Apply

Active 6 Obsolete 3 Transferred 4

13 hits Apply

Yes 2

13 hits Apply

NOT SPECIFIED 4

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

55 W 2 100 W 2

Min (W) - Max (W)

13 hits Apply

55 W 1 100 W 1

Min (W) - Max (W)

13 hits Apply

Power Gain-Min (Gp) (2)

12.0 dB 2 13.0 dB 2

Min (dB) - Max (dB)

13 hits Apply

Surface Mount (2)

NO 6 YES 4

13 hits Apply