Part Details for MLD1N06CLT4G by onsemi
Overview of MLD1N06CLT4G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for MLD1N06CLT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
45J1509
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Newark | Mosfet, 62V, 1A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:62V, Continuous Drain Current Id:1A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:1.5V, Power Dissipation:40W Rohs Compliant: Yes |Onsemi MLD1N06CLT4G Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Part Details for MLD1N06CLT4G
MLD1N06CLT4G CAD Models
MLD1N06CLT4G Part Data Attributes:
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MLD1N06CLT4G
onsemi
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Datasheet
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Compare Parts:
MLD1N06CLT4G
onsemi
Single N-Channel Power MOSFET with Voltage Clamp, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 59 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 1.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MLD1N06CLT4G
This table gives cross-reference parts and alternative options found for MLD1N06CLT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MLD1N06CLT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MLD1N06CLT4 | Single N-Channel Power MOSFET with Voltage Clamp, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | MLD1N06CLT4G vs MLD1N06CLT4 |
| MLD1N06CLT4G | 1A, 59V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C, DPAK-3 | Rochester Electronics LLC | MLD1N06CLT4G vs MLD1N06CLT4G |