MLD1N06CLT4G vs MLD1N06CLT4G feature comparison

MLD1N06CLT4G onsemi

Buy Now Datasheet

MLD1N06CLT4G Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR ROCHESTER ELECTRONICS LLC
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 CASE 369C, DPAK-3
Pin Count 3 3
Manufacturer Package Code 369C CASE 369C
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 80 mJ 80 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
DS Breakdown Voltage-Min 59 V 59 V
Drain Current-Max (ID) 1 A 1 A
Drain-source On Resistance-Max 0.75 Ω 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 1.8 A 1.8 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 40 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Moisture Sensitivity Level NOT SPECIFIED

Compare MLD1N06CLT4G with alternatives

Compare MLD1N06CLT4G with alternatives