Parametric results for: MLD1N06CLT4G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2

2 hits Apply

80.0 mJ 2

2 hits Apply

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR 2

2 hits Apply

DS Breakdown Voltage-Min (1)

59 V 2

2 hits Apply

Drain Current-Max (ID) (1)

1 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

750 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PSSO-G2 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

onsemi 1 Rochester Electronics LLC 1

2 hits Apply

NOT SPECIFIED 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

No 1 Yes 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

40 W 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply