There are no models available for this part yet.
Overview of MG300Q1US41 by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for MG300Q1US41 by Toshiba America Electronic Components
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Quest Components | IGBT Power Module Transistor, Independent | 1 |
|
Buy Now |
CAD Models for MG300Q1US41 by Toshiba America Electronic Components
Part Data Attributes for MG300Q1US41 by Toshiba America Electronic Components
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
TOSHIBA CORP
|
Package Description
|
FLANGE MOUNT, R-XUFM-X4
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
HIGH SPEED
|
Case Connection
|
ISOLATED
|
Collector Current-Max (IC)
|
300 A
|
Collector-Emitter Voltage-Max
|
1200 V
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
Fall Time-Max (tf)
|
500 ns
|
Gate-Emitter Thr Voltage-Max
|
6 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JESD-30 Code
|
R-XUFM-X4
|
Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation Ambient-Max
|
2000 W
|
Power Dissipation-Max (Abs)
|
2000 W
|
Qualification Status
|
Not Qualified
|
Rise Time-Max (tr)
|
600 ns
|
Surface Mount
|
NO
|
Terminal Form
|
UNSPECIFIED
|
Terminal Position
|
UPPER
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
MOTOR CONTROL
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Nom (toff)
|
800 ns
|
Turn-on Time-Nom (ton)
|
400 ns
|
VCEsat-Max
|
4 V
|
Alternate Parts for MG300Q1US41
This table gives cross-reference parts and alternative options found for MG300Q1US41. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300Q1US41, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MG300N1US1 | TRANSISTOR 300 A, 1000 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US41 vs MG300N1US1 |
2MBI150NB-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | MG300Q1US41 vs 2MBI150NB-120 |
CM600HA-24H | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | Mitsubishi Electric | MG300Q1US41 vs CM600HA-24H |
MG100Q2YS50 | TRANSISTOR IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US41 vs MG100Q2YS50 |
MG300Q1US2 | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US41 vs MG300Q1US2 |
CM150DU-24H | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MG300Q1US41 vs CM150DU-24H |
1MBI200S-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | MG300Q1US41 vs 1MBI200S-120 |
CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MG300Q1US41 vs CM150DY-24T |
MG500Q1US1 | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US41 vs MG500Q1US1 |
MG100Q2YS40 | TRANSISTOR 100 A, 1200 V, N-CHANNEL IGBT, 2-108A2A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300Q1US41 vs MG100Q2YS40 |