Part Details for 1MBI200S-120 by Fuji Electric Co Ltd
Overview of 1MBI200S-120 by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 1MBI200S-120
1MBI200S-120 CAD Models
1MBI200S-120 Part Data Attributes
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1MBI200S-120
Fuji Electric Co Ltd
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Datasheet
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1MBI200S-120
Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Package Description | FLANGE MOUNT, R-XUFM-X4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | FUJI ELECTRIC | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1300 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 450 ns | |
Turn-on Time-Nom (ton) | 350 ns | |
VCEsat-Max | 2.6 V |
Alternate Parts for 1MBI200S-120
This table gives cross-reference parts and alternative options found for 1MBI200S-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200S-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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1MBI300N-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN | 1MBI200S-120 vs 1MBI300N-120 |
MG100Q2YS51A | Toshiba America Electronic Components | Check for Price | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | 1MBI200S-120 vs MG100Q2YS51A |
MG300Q2YS61 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor | 1MBI200S-120 vs MG300Q2YS61 |
1MBI300NA-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M130, 5 PIN | 1MBI200S-120 vs 1MBI300NA-120 |
APTGT200U120D4 | Microsemi Corporation | Check for Price | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 | 1MBI200S-120 vs APTGT200U120D4 |
MBN300GS12A | Renesas Electronics Corporation | Check for Price | 300A, 1200V, N-CHANNEL IGBT, MODULE | 1MBI200S-120 vs MBN300GS12A |
CM100DY-24A | Mitsubishi Electric | $89.2437 | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | 1MBI200S-120 vs CM100DY-24A |
CM600HA-24A | Mitsubishi Electric | $164.3125 | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4 | 1MBI200S-120 vs CM600HA-24A |
MG500Q1US21 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | 1MBI200S-120 vs MG500Q1US21 |
1MBI400SA-120 | Fuji Electric Co Ltd | Check for Price | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel | 1MBI200S-120 vs 1MBI400SA-120 |