Datasheets
1MBI200S-120 by: Fuji Electric Co Ltd

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel

Part Details for 1MBI200S-120 by Fuji Electric Co Ltd

Overview of 1MBI200S-120 by Fuji Electric Co Ltd

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Applications Industrial Automation Electronic Manufacturing

Part Details for 1MBI200S-120

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1MBI200S-120 Part Data Attributes

1MBI200S-120 Fuji Electric Co Ltd
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1MBI200S-120 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJI ELECTRIC CO LTD
Package Description FLANGE MOUNT, R-XUFM-X4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer FUJI ELECTRIC
Case Connection ISOLATED
Collector Current-Max (IC) 300 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1300 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 350 ns
VCEsat-Max 2.6 V

Alternate Parts for 1MBI200S-120

This table gives cross-reference parts and alternative options found for 1MBI200S-120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1MBI200S-120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
1MBI300N-120 Fuji Electric Co Ltd Check for Price Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M127, 4 PIN 1MBI200S-120 vs 1MBI300N-120
MG100Q2YS51A Toshiba America Electronic Components Check for Price TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor 1MBI200S-120 vs MG100Q2YS51A
MG300Q2YS61 Toshiba America Electronic Components Check for Price TRANSISTOR 300 A, 1200 V, N-CHANNEL IGBT, 2-109C4A, 7 PIN, Insulated Gate BIP Transistor 1MBI200S-120 vs MG300Q2YS61
1MBI300NA-120 Fuji Electric Co Ltd Check for Price Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M130, 5 PIN 1MBI200S-120 vs 1MBI300NA-120
APTGT200U120D4 Microsemi Corporation Check for Price Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 1MBI200S-120 vs APTGT200U120D4
MBN300GS12A Renesas Electronics Corporation Check for Price 300A, 1200V, N-CHANNEL IGBT, MODULE 1MBI200S-120 vs MBN300GS12A
CM100DY-24A Mitsubishi Electric $89.2437 Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 1MBI200S-120 vs CM100DY-24A
CM600HA-24A Mitsubishi Electric $164.3125 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-4 1MBI200S-120 vs CM600HA-24A
MG500Q1US21 Toshiba America Electronic Components Check for Price TRANSISTOR 500 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor 1MBI200S-120 vs MG500Q1US21
1MBI400SA-120 Fuji Electric Co Ltd Check for Price Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel 1MBI200S-120 vs 1MBI400SA-120

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