Part Details for MG300J2YS50 by Toshiba America Electronic Components
Overview of MG300J2YS50 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MG300J2YS50
MG300J2YS50 CAD Models
MG300J2YS50 Part Data Attributes:
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MG300J2YS50
Toshiba America Electronic Components
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Datasheet
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MG300J2YS50
Toshiba America Electronic Components
TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | 2-109C1A, 7 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH SPEED | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 300 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 300 ns | |
| Gate-Emitter Thr Voltage-Max | 8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1300 W | |
| Power Dissipation-Max (Abs) | 1300 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 300 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 400 ns | |
| Turn-off Time-Nom (toff) | 200 ns | |
| Turn-on Time-Max (ton) | 400 ns | |
| Turn-on Time-Nom (ton) | 200 ns | |
| VCEsat-Max | 2.7 V |
Alternate Parts for MG300J2YS50
This table gives cross-reference parts and alternative options found for MG300J2YS50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MG300J2YS50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG400J1US1 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J2YS50 vs MG400J1US1 |
| CM300DY-12NF | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | MG300J2YS50 vs CM300DY-12NF |
| 1MBI600NP-060 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M128, 4 PIN | Fuji Electric Co Ltd | MG300J2YS50 vs 1MBI600NP-060 |
| MG400J1US51 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J2YS50 vs MG400J1US51 |
| BSM400GB60DN2 | Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | MG300J2YS50 vs BSM400GB60DN2 |
| APTGT300A60G | Insulated Gate Bipolar Transistor, 430A I(C), 600V V(BR)CES, N-Channel | Microchip Technology Inc | MG300J2YS50 vs APTGT300A60G |
| CM300DU-12F | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | MG300J2YS50 vs CM300DU-12F |
| MG150J2YS11 | TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J2YS50 vs MG150J2YS11 |
| MG150J2YS1 | TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MG300J2YS50 vs MG150J2YS1 |
| 2MBI300N-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, M236, 7 PIN | Fuji Electric Co Ltd | MG300J2YS50 vs 2MBI300N-120 |