Part Details for MBM200GS12A by Renesas Electronics Corporation
Overview of MBM200GS12A by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Aerospace and Defense
Part Details for MBM200GS12A
MBM200GS12A CAD Models
MBM200GS12A Part Data Attributes
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MBM200GS12A
Renesas Electronics Corporation
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Datasheet
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MBM200GS12A
Renesas Electronics Corporation
200A, 1200V, N-CHANNEL IGBT, MODULE
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | MODULE | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH SPEED, ULTRA SOFT FAST RECOVERY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Number of Elements | 2 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-on Time-Nom (ton) | 350 ns |
Alternate Parts for MBM200GS12A
This table gives cross-reference parts and alternative options found for MBM200GS12A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MBM200GS12A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM200DY-12H | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Powerex Power Semiconductors | MBM200GS12A vs CM200DY-12H |
| BSM150GB120DN2E3166 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | MBM200GS12A vs BSM150GB120DN2E3166 |
| CM200DY-24A | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | MBM200GS12A vs CM200DY-24A |
| CM200DU-24F | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | MBM200GS12A vs CM200DU-24F |
| MG200J2YS11 | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MBM200GS12A vs MG200J2YS11 |
| MG200Q1US1 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MBM200GS12A vs MG200Q1US1 |
| CM200DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | MBM200GS12A vs CM200DY-24T |
| 2MBI200L-120 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, M225, 7 PIN | Fuji Electric Co Ltd | MBM200GS12A vs 2MBI200L-120 |
| BSM100GB120DLC | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MBM200GS12A vs BSM100GB120DLC |
| MG200Q2YS40 | TRANSISTOR 200 A, 1200 V, N-CHANNEL IGBT, 2-109C1A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | MBM200GS12A vs MG200Q2YS40 |