Part Details for MB81V4265S-60PFTN by FUJITSU Limited
Overview of MB81V4265S-60PFTN by FUJITSU Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Healthcare
Part Details for MB81V4265S-60PFTN
MB81V4265S-60PFTN CAD Models
MB81V4265S-60PFTN Part Data Attributes
|
|
MB81V4265S-60PFTN
FUJITSU Limited
Buy Now
Datasheet
|
Compare Parts:
MB81V4265S-60PFTN
FUJITSU Limited
EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40
|
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP40/44,.46,32 | |
| Pin Count | 44 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FAST PAGE WITH EDO | |
| Access Time-Max | 60 ns | |
| Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDSO-G40 | |
| JESD-609 Code | e0 | |
| Length | 18.41 mm | |
| Memory Density | 4194304 bit | |
| Memory IC Type | EDO DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 40 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 256KX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP40/44,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 512 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.105 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for MB81V4265S-60PFTN
This table gives cross-reference parts and alternative options found for MB81V4265S-60PFTN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81V4265S-60PFTN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HM51W4265CTT-6 | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, MO-133BA, TSOP2-44/40 | Hitachi Ltd | MB81V4265S-60PFTN vs HM51W4265CTT-6 |
| UPD42S4210ALG5-A60 | IC,DRAM,EDO,256KX16,CMOS,TSOP,40PIN,PLASTIC | Renesas Electronics Corporation | MB81V4265S-60PFTN vs UPD42S4210ALG5-A60 |
| M5M4V4265CTP-6T | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40 | Mitsubishi Electric | MB81V4265S-60PFTN vs M5M4V4265CTP-6T |
| HY51V4264BSLRC-60 | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, REVERSE, TSOP2-44/40 | SK Hynix Inc | MB81V4265S-60PFTN vs HY51V4264BSLRC-60 |
| M5M4V4265CTP-6ST | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40 | Mitsubishi Electric | MB81V4265S-60PFTN vs M5M4V4265CTP-6ST |
| MT4LC16270TG-6TR | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | Micron Technology Inc | MB81V4265S-60PFTN vs MT4LC16270TG-6TR |
| MB81V4265-60PFTN | 256KX16 EDO DRAM, 60ns, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | FUJITSU Semiconductor Limited | MB81V4265S-60PFTN vs MB81V4265-60PFTN |
| MB81V4265S-60LPFTN | 256KX16 EDO DRAM, 60ns, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | FUJITSU Semiconductor Limited | MB81V4265S-60PFTN vs MB81V4265S-60LPFTN |
| TC51V4265DFTS-60 | IC 256K X 16 EDO DRAM, 60 ns, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40, Dynamic RAM | Toshiba America Electronic Components | MB81V4265S-60PFTN vs TC51V4265DFTS-60 |
| HY51V4264BLTC-60 | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | SK Hynix Inc | MB81V4265S-60PFTN vs HY51V4264BLTC-60 |