Datasheets
MB81V4265-60PFTN by:

EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40

Part Details for MB81V4265-60PFTN by FUJITSU Limited

Overview of MB81V4265-60PFTN by FUJITSU Limited

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Applications Consumer Electronics Healthcare

Part Details for MB81V4265-60PFTN

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MB81V4265-60PFTN Part Data Attributes

MB81V4265-60PFTN FUJITSU Limited
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MB81V4265-60PFTN FUJITSU Limited EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU LTD
Package Description TSOP2,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 60 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-G40
Length 18.41 mm
Memory Density 4194304 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 40
Number of Words 262144 words
Number of Words Code 256000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for MB81V4265-60PFTN

This table gives cross-reference parts and alternative options found for MB81V4265-60PFTN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81V4265-60PFTN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AS4LC256K16E0-60TC EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Alliance Semiconductor Corporation MB81V4265-60PFTN vs AS4LC256K16E0-60TC
KM416V254BLTR-6 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-44/40 Samsung Semiconductor MB81V4265-60PFTN vs KM416V254BLTR-6
UPD424210ALG5-A60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 NEC Electronics America Inc MB81V4265-60PFTN vs UPD424210ALG5-A60
UPD424210ALG5-A60 IC,DRAM,EDO,256KX16,CMOS,TSOP,40PIN,PLASTIC Renesas Electronics Corporation MB81V4265-60PFTN vs UPD424210ALG5-A60
HY51V4264BRC-60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, REVERSE, TSOP2-44/40 SK Hynix Inc MB81V4265-60PFTN vs HY51V4264BRC-60
HY51V4264BSLRC-60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, REVERSE, TSOP2-44/40 SK Hynix Inc MB81V4265-60PFTN vs HY51V4264BSLRC-60
M5M4V4265CTP-6T EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40 Mitsubishi Electric MB81V4265-60PFTN vs M5M4V4265CTP-6T
UPD42S4210ALG5-A60 IC,DRAM,EDO,256KX16,CMOS,TSOP,40PIN,PLASTIC Renesas Electronics Corporation MB81V4265-60PFTN vs UPD42S4210ALG5-A60
HY51V4264BLRC-60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, REVERSE, TSOP2-44/40 SK Hynix Inc MB81V4265-60PFTN vs HY51V4264BLRC-60
KM416V254BLLTR-6 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-40 Samsung Semiconductor MB81V4265-60PFTN vs KM416V254BLLTR-6
Part Number Description Manufacturer Compare
MSM51V4265E-60TS-K EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40 OKI Electric Industry Co Ltd MB81V4265-60PFTN vs MSM51V4265E-60TS-K
UPD424210ALLE-A60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 NEC Electronics America Inc MB81V4265-60PFTN vs UPD424210ALLE-A60
VG26VS4265DT-60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Vanguard International Semiconductor Corporation MB81V4265-60PFTN vs VG26VS4265DT-60
KM416V254DT-6 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Samsung Semiconductor MB81V4265-60PFTN vs KM416V254DT-6
AS4LC256K16E0-60JC EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Alliance Semiconductor Corporation MB81V4265-60PFTN vs AS4LC256K16E0-60JC
M5M4V4265CJ-6S EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40 Mitsubishi Electric MB81V4265-60PFTN vs M5M4V4265CJ-6S
IBM015161NJ3A-60 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, SOJ-40 IBM MB81V4265-60PFTN vs IBM015161NJ3A-60
AS4LC256K16E0-60TC EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Alliance Semiconductor Corporation MB81V4265-60PFTN vs AS4LC256K16E0-60TC
IS41LV16256A-60TL EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-40 Integrated Silicon Solution Inc MB81V4265-60PFTN vs IS41LV16256A-60TL
KM416V254DLJ-6 EDO DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, SOJ-40 Samsung Semiconductor MB81V4265-60PFTN vs KM416V254DLJ-6

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