Datasheets
M464S0924DTS-L1H by: Samsung Semiconductor

Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144

Part Details for M464S0924DTS-L1H by Samsung Semiconductor

Overview of M464S0924DTS-L1H by Samsung Semiconductor

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Applications Education and Research Consumer Electronics Computing and Data Storage

Part Details for M464S0924DTS-L1H

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M464S0924DTS-L1H Part Data Attributes

M464S0924DTS-L1H Samsung Semiconductor
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M464S0924DTS-L1H Samsung Semiconductor Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE
Package Description DIMM, DIMM144,32
Pin Count 144
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode SINGLE BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N144
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM144,32
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 25.4 mm
Self Refresh YES
Standby Current-Max 0.008 A
Supply Current-Max 0.76 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.8 mm
Terminal Position DUAL

Alternate Parts for M464S0924DTS-L1H

This table gives cross-reference parts and alternative options found for M464S0924DTS-L1H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M464S0924DTS-L1H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYM71V8M655ALT6-P Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924DTS-L1H vs HYM71V8M655ALT6-P
HYM71V8M655BLT6-S Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924DTS-L1H vs HYM71V8M655BLT6-S
Part Number Description Manufacturer Compare
HB56SW864DBK-7 EDO DRAM Module, 8MX64, 70ns, CMOS, SODIMM-144 Hitachi Ltd M464S0924DTS-L1H vs HB56SW864DBK-7
MB8508S064AE-100DG Synchronous DRAM Module, 8MX64, 8.5ns, CMOS, PDMA144 FUJITSU Limited M464S0924DTS-L1H vs MB8508S064AE-100DG
HYM71V8M655BT6-8 Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924DTS-L1H vs HYM71V8M655BT6-8
M463S0924DT1-C7C Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, SODIMM-144 Samsung Semiconductor M464S0924DTS-L1H vs M463S0924DT1-C7C
STI648100G1-60VGU Fast Page DRAM Module, 8MX64, 60ns, CMOS, DIMM-144 Simple Tech Inc M464S0924DTS-L1H vs STI648100G1-60VGU
MT4LSDT864HIG-133XX Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, SODIMM-144 Micron Technology Inc M464S0924DTS-L1H vs MT4LSDT864HIG-133XX
MT4LSDT864LWY-133XX Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, DIMM-144 Micron Technology Inc M464S0924DTS-L1H vs MT4LSDT864LWY-133XX
HB56SW864DBK-6 EDO DRAM Module, 8MX64, 60ns, CMOS, SODIMM-144 Hitachi Ltd M464S0924DTS-L1H vs HB56SW864DBK-6
HYM71V8M655HCLTU6-S Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924DTS-L1H vs HYM71V8M655HCLTU6-S
W3DG648V10D1 Synchronous DRAM Module, 8MX64, CMOS, SODIMM-144 Microsemi Corporation M464S0924DTS-L1H vs W3DG648V10D1

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