Part Details for JANTX2N7225 by International Rectifier
Overview of JANTX2N7225 by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for JANTX2N7225
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-254AA | 11 |
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$84.8250 / $91.8938 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-254AA | 2 |
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$63.9600 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-254AA | 1 |
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$141.3750 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-254AA | 7 |
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$127.2375 / $141.3750 | Buy Now |
Part Details for JANTX2N7225
JANTX2N7225 CAD Models
JANTX2N7225 Part Data Attributes:
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JANTX2N7225
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANTX2N7225
International Rectifier
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-254AA | |
Package Description | HERMETIC SEALED, TO-254AA, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 27.4 A | |
Drain-source On Resistance-Max | 0.105 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/592 | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N7225
This table gives cross-reference parts and alternative options found for JANTX2N7225. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N7225, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFM250 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | JANTX2N7225 vs IRFM250 |
IRFM250-JQR-BR1 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | TT Electronics Resistors | JANTX2N7225 vs IRFM250-JQR-BR1 |
JANHCA2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | International Rectifier | JANTX2N7225 vs JANHCA2N7225 |
IRFM250R1 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | TT Electronics Resistors | JANTX2N7225 vs IRFM250R1 |
IRFM250-JQR-BR1 | 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N7225 vs IRFM250-JQR-BR1 |
JAN2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Microsemi Corporation | JANTX2N7225 vs JAN2N7225 |
IRFM250R1 | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N7225 vs IRFM250R1 |
2N7225 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN | Sensitron Semiconductors | JANTX2N7225 vs 2N7225 |
IRFM250 | 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JANTX2N7225 vs IRFM250 |
IRFM250 | Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | JANTX2N7225 vs IRFM250 |