Datasheets
IRFM250R1 by:

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN

Part Details for IRFM250R1 by TT Electronics Resistors

Overview of IRFM250R1 by TT Electronics Resistors

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for IRFM250R1

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IRFM250R1 Part Data Attributes:

IRFM250R1 TT Electronics Resistors
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IRFM250R1 TT Electronics Resistors Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TT ELECTRONICS PLC
Package Description FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 27.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFM250R1

This table gives cross-reference parts and alternative options found for IRFM250R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM250R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM250R1 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM250R1 vs IRFM250R1
JANTX2N7225 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Intersil Corporation IRFM250R1 vs JANTX2N7225
2N7225R1 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM250R1 vs 2N7225R1
JANTX2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Omnirel Corp IRFM250R1 vs JANTX2N7225
JANTX2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier IRFM250R1 vs JANTX2N7225
2N7225R1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors IRFM250R1 vs 2N7225R1
2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN Sensitron Semiconductors IRFM250R1 vs 2N7225
IRFM250-JQR-B 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM250R1 vs IRFM250-JQR-B
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Voltage Multipliers Inc IRFM250R1 vs JANTXV2N7225
IRFM250 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM250R1 vs IRFM250
Part Number Description Manufacturer Compare
2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Temic Semiconductors IRFM250R1 vs 2N7225
2N7225U1-JQR-B Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors IRFM250R1 vs 2N7225U1-JQR-B
JANTX2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3 Microsemi Corporation IRFM250R1 vs JANTX2N7225U
2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, Infineon Technologies AG IRFM250R1 vs 2N7225U
IRFN250-JQR-BR4 Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFM250R1 vs IRFN250-JQR-BR4
2N7225R1 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM250R1 vs 2N7225R1
SHD2183S Power Field-Effect Transistor, 30A I(D), 200V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5, 3 PIN Sensitron Semiconductors IRFM250R1 vs SHD2183S
IRFN250R4 Power Field-Effect Transistor, 22A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TT Electronics Resistors IRFM250R1 vs IRFN250R4
IRFN250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG IRFM250R1 vs IRFN250
2N7225U1 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFM250R1 vs 2N7225U1

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