Part Details for IS42S16400F-6BLI by Integrated Silicon Solution Inc
Overview of IS42S16400F-6BLI by Integrated Silicon Solution Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Computing and Data Storage
Part Details for IS42S16400F-6BLI
IS42S16400F-6BLI CAD Models
IS42S16400F-6BLI Part Data Attributes
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IS42S16400F-6BLI
Integrated Silicon Solution Inc
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Datasheet
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IS42S16400F-6BLI
Integrated Silicon Solution Inc
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-54
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTEGRATED SILICON SOLUTION INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA54,9X9,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Samacsys Manufacturer | Integrated Silicon Solution Inc. | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | S-PBGA-B54 | |
| JESD-609 Code | e1 | |
| Length | 8 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.155 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Width | 8 mm |
Alternate Parts for IS42S16400F-6BLI
This table gives cross-reference parts and alternative options found for IS42S16400F-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16400F-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M2L64S40DWG-7L | Synchronous DRAM, 4MX16, 8ns, CMOS, PBGA54, BGA-54 | Mitsubishi Electric | IS42S16400F-6BLI vs M2L64S40DWG-7L |
| K4M64163LK-RG1H0 | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 | Samsung Semiconductor | IS42S16400F-6BLI vs K4M64163LK-RG1H0 |
| MT48LC4M16A2F4-7E:G | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 | Micron Technology Inc | IS42S16400F-6BLI vs MT48LC4M16A2F4-7E:G |
| IS42S16402J-6BLI | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-54 | Integrated Silicon Solution Inc | IS42S16400F-6BLI vs IS42S16402J-6BLI |
| K4M64163PH-BG750 | Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | Samsung Semiconductor | IS42S16400F-6BLI vs K4M64163PH-BG750 |
| K4S641633H-BN750 | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | Samsung Semiconductor | IS42S16400F-6BLI vs K4S641633H-BN750 |
| K4S641633H-BF1L0 | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | Samsung Semiconductor | IS42S16400F-6BLI vs K4S641633H-BF1L0 |
| HY5V66DFP-K | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | SK Hynix Inc | IS42S16400F-6BLI vs HY5V66DFP-K |
| K4S641633F-RN1L | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, CSP-54 | Samsung Semiconductor | IS42S16400F-6BLI vs K4S641633F-RN1L |
| MT48LC4M16A2B4-75LIT:G | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, ROHS COMPLIANT, VFBGA-54 | Micron Technology Inc | IS42S16400F-6BLI vs MT48LC4M16A2B4-75LIT:G |