Datasheets
MT48LC4M16A2F4-7E:G by: Micron Technology Inc

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54

Part Details for MT48LC4M16A2F4-7E:G by Micron Technology Inc

Overview of MT48LC4M16A2F4-7E:G by Micron Technology Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for MT48LC4M16A2F4-7E:G

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MT48LC4M16A2F4-7E:G Part Data Attributes

MT48LC4M16A2F4-7E:G Micron Technology Inc
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MT48LC4M16A2F4-7E:G Micron Technology Inc Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description 8 X 8 MM, VFBGA-54
Pin Count 54
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code S-PBGA-B54
JESD-609 Code e0
Length 8 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape SQUARE
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.23 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD SILVER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for MT48LC4M16A2F4-7E:G

This table gives cross-reference parts and alternative options found for MT48LC4M16A2F4-7E:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC4M16A2F4-7E:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY5V66EFP-7 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc MT48LC4M16A2F4-7E:G vs HY5V66EFP-7
HY5V66EF-7 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-54 SK Hynix Inc MT48LC4M16A2F4-7E:G vs HY5V66EF-7
MT48LC4M16A2B4-7E Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, Micron Technology Inc MT48LC4M16A2F4-7E:G vs MT48LC4M16A2B4-7E
MT48LC4M16A2F4-7E IC,SDRAM,4X1MX16,CMOS,BGA,54PIN,PLASTIC Micron Technology Inc MT48LC4M16A2F4-7E:G vs MT48LC4M16A2F4-7E
Part Number Description Manufacturer Compare
M2L64S40DWG-7L Synchronous DRAM, 4MX16, 8ns, CMOS, PBGA54, BGA-54 Mitsubishi Electric MT48LC4M16A2F4-7E:G vs M2L64S40DWG-7L
K4M64163LK-RG1H0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 Samsung Semiconductor MT48LC4M16A2F4-7E:G vs K4M64163LK-RG1H0
IS42S16402J-6BLI Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-54 Integrated Silicon Solution Inc MT48LC4M16A2F4-7E:G vs IS42S16402J-6BLI
K4M64163PH-BG750 Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48LC4M16A2F4-7E:G vs K4M64163PH-BG750
K4S641633H-BN750 Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48LC4M16A2F4-7E:G vs K4S641633H-BN750
K4S641633H-BF1L0 Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 Samsung Semiconductor MT48LC4M16A2F4-7E:G vs K4S641633H-BF1L0
HY5V66DFP-K Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc MT48LC4M16A2F4-7E:G vs HY5V66DFP-K
K4S641633F-RN1L Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, CSP-54 Samsung Semiconductor MT48LC4M16A2F4-7E:G vs K4S641633F-RN1L
MT48LC4M16A2B4-75LIT:G Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, ROHS COMPLIANT, VFBGA-54 Micron Technology Inc MT48LC4M16A2F4-7E:G vs MT48LC4M16A2B4-75LIT:G
M12L64164A-6BIG Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, FVBGA Elite Semiconductor Memory Technology Inc MT48LC4M16A2F4-7E:G vs M12L64164A-6BIG

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