There are no models available for this part yet.
Overview of IRLR210ATF by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 6 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
CAD Models for IRLR210ATF by Fairchild Semiconductor Corporation
Part Data Attributes for IRLR210ATF by Fairchild Semiconductor Corporation
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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FAIRCHILD SEMICONDUCTOR CORP
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Part Package Code
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TO-252
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Package Description
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DPAK-3
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Pin Count
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3
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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24 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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200 V
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Drain Current-Max (ID)
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2.7 A
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Drain-source On Resistance-Max
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1.5 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-252
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e3
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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21 W
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Pulsed Drain Current-Max (IDM)
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9 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRLR210ATF
This table gives cross-reference parts and alternative options found for IRLR210ATF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR210ATF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD4N20TM | Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRLR210ATF vs FQD4N20TM |
| FQD4N20TF | 3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | IRLR210ATF vs FQD4N20TF |
| IRLR210ATM | 2.7A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | IRLR210ATF vs IRLR210ATM |
| FQD4N20TM | 3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | IRLR210ATF vs FQD4N20TM |
| IRLR210A | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRLR210ATF vs IRLR210A |
| FQD4N20TM | N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, 2500-REEL | onsemi | IRLR210ATF vs FQD4N20TM |