Part Details for FQD4N20TM by Fairchild Semiconductor Corporation
Overview of FQD4N20TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for FQD4N20TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FQD4N20TM-ND
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DigiKey | POWER FIELD-EFFECT TRANSISTOR, 3 Min Qty: 1086 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2537 In Stock |
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$0.2800 | Buy Now |
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Bristol Electronics | 429 |
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RFQ | ||
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Bristol Electronics | 124 |
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RFQ | ||
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Quest Components | 343 |
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$0.2975 / $0.5950 | Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 3A, 200V, 1.4ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: Obsolete Min Qty: 1 | 3182 |
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$0.2372 / $0.2790 | Buy Now |
Part Details for FQD4N20TM
FQD4N20TM CAD Models
FQD4N20TM Part Data Attributes
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FQD4N20TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQD4N20TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 52 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD4N20TM
This table gives cross-reference parts and alternative options found for FQD4N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD4N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD4N20TF | 3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD4N20TM vs FQD4N20TF |
| IRLR210ATF | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD4N20TM vs IRLR210ATF |
| IRLR210ATM | 2.7A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD4N20TM vs IRLR210ATM |
| FQD4N20TM | 3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FQD4N20TM vs FQD4N20TM |
| IRLR210A | Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | FQD4N20TM vs IRLR210A |
| FQD4N20TM | N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, 2500-REEL | onsemi | FQD4N20TM vs FQD4N20TM |