Part Details for IRLR220A by Fairchild Semiconductor Corporation
Overview of IRLR220A by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRLR220A
IRLR220A CAD Models
IRLR220A Part Data Attributes
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IRLR220A
Fairchild Semiconductor Corporation
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Datasheet
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IRLR220A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 28 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR220A
This table gives cross-reference parts and alternative options found for IRLR220A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR220A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD630TM | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRLR220A vs FQD630TM |
| IRFW610A | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | IRLR220A vs IRFW610A |
| FQD10N20L | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRLR220A vs FQD10N20L |
| IRLR230A | Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | IRLR220A vs IRLR230A |
| IRFR221 | Power Field-Effect Transistor, 4.6A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | IRLR220A vs IRFR221 |
| FQD7N20TM | 200V N-Channel QFET®, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL | Fairchild Semiconductor Corporation | IRLR220A vs FQD7N20TM |
| 2SK2199 | Power Field-Effect Transistor, 0.8A I(D), 250V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN | SANYO Electric Co Ltd | IRLR220A vs 2SK2199 |
| FQD4N20TM | N-Channel QFET® MOSFET 200V, 3A, 1.4Ω, DPAK-3 / TO-252-3, 2500-REEL | onsemi | IRLR220A vs FQD4N20TM |
| IRFR230A | Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | IRLR220A vs IRFR230A |
| IRFR221 | 4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | IRLR220A vs IRFR221 |