Part Details for IRGPH40KD2 by International Rectifier
Overview of IRGPH40KD2 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRGPH40KD2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 2 | 175 |
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$1.4559 / $3.3600 | Buy Now |
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Quest Components | 140 |
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$2.1000 / $4.5000 | Buy Now |
Part Details for IRGPH40KD2
IRGPH40KD2 CAD Models
IRGPH40KD2 Part Data Attributes:
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IRGPH40KD2
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRGPH40KD2
International Rectifier
Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | ULTRAFAST | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 19 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 640 ns | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 160 W | |
| Power Dissipation-Max (Abs) | 160 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 3.5 V |
Alternate Parts for IRGPH40KD2
This table gives cross-reference parts and alternative options found for IRGPH40KD2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRGPH40KD2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IRGPH40KD2 vs HGT1S3N60B3S |
| APT45GL100BN | 45A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | IRGPH40KD2 vs APT45GL100BN |
| IRG4BC20W-S | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRGPH40KD2 vs IRG4BC20W-S |
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | Fairchild Semiconductor Corporation | IRGPH40KD2 vs HGTP20N60C3R |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | IRGPH40KD2 vs IRGPC50U |
| IRG4BC20FD-STRR | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | IRGPH40KD2 vs IRG4BC20FD-STRR |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | IRGPH40KD2 vs HGTD7N60C3S9A |
| HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | IRGPH40KD2 vs HGTP12N60C3 |
| IRG4BC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRGPH40KD2 vs IRG4BC40K |
| 1MB10-120 | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | IRGPH40KD2 vs 1MB10-120 |