Part Details for IRFR120 by International Rectifier
Overview of IRFR120 by International Rectifier
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFR120
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 986 |
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RFQ | ||
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Bristol Electronics | Min Qty: 5 | 465 |
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$0.3600 / $1.1250 | Buy Now |
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Bristol Electronics | 88 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 1426 |
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$0.4375 / $1.0500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 588 |
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$0.5460 / $1.3650 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 372 |
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$0.4500 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 388 |
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$0.6262 / $1.5655 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 2617 |
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$0.5250 / $1.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 1298 |
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$0.5000 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-252AA | 721 |
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$0.7000 / $1.7500 | Buy Now |
Part Details for IRFR120
IRFR120 CAD Models
IRFR120 Part Data Attributes:
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IRFR120
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR120
International Rectifier
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 42 W | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR120
This table gives cross-reference parts and alternative options found for IRFR120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR120TRRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR120 vs IRFR120TRRPBF |
| IRFR120TR | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR120 vs IRFR120TR |
| IRFR120TRLPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR120 vs IRFR120TRLPBF |
| IRFR120 | 8.4A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | IRFR120 vs IRFR120 |
| IRFR120TRL | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR120 vs IRFR120TRL |
| IRFR120TRR | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR120 vs IRFR120TRR |