Datasheets
IRFR120 by:
International Rectifier
Fairchild Semiconductor Corporation
Harris Semiconductor
Infineon Technologies AG
International Rectifier
Intersil Corporation
Rochester Electronics LLC
Samsung Semiconductor
Thomson Consumer Electronics
Vishay Huntington
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for IRFR120 by International Rectifier

Results Overview of IRFR120 by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFR120 Information

IRFR120 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR120

Part # Distributor Description Stock Price Buy
Bristol Electronics   986
RFQ
Bristol Electronics   88
RFQ
Quest Components 8.4 A, 100 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 2617
  • 1 $1.7500
  • 1,144 $0.6125
  • 2,450 $0.5250
$0.5250 / $1.7500 Buy Now
Quest Components 8.4 A, 100 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 1418
  • 1 $1.0500
  • 80 $0.4900
  • 409 $0.4375
$0.4375 / $1.0500 Buy Now
Quest Components 8.4 A, 100 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 1298
  • 1 $1.2500
  • 81 $0.6250
  • 321 $0.5000
$0.5000 / $1.2500 Buy Now
Quest Components 8.4 A, 100 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 721
  • 1 $1.7500
  • 58 $0.8750
  • 230 $0.7000
$0.7000 / $1.7500 Buy Now
Quest Components 8.4 A, 100 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 588
  • 1 $0.8400
  • 120 $0.4200
  • 477 $0.3360
$0.3360 / $0.8400 Buy Now
Quest Components 8.4 A, 100 V, 0.27 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252AA 388
  • 1 $1.5655
  • 65 $0.7828
  • 257 $0.6262
$0.6262 / $1.5655 Buy Now
ComSIT USA Electronic Component RoHS: Not Compliant Stock DE - 0
Stock ES - 150
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 4
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now

Part Details for IRFR120

IRFR120 CAD Models

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IRFR120 Part Data Attributes

IRFR120 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFR120 International Rectifier Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 42 W
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR120

This table gives cross-reference parts and alternative options found for IRFR120. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFR120PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRFR120 vs IRFR120PBF
SIHFR120TR-GE3 Vishay Siliconix Check for Price TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power IRFR120 vs SIHFR120TR-GE3
IRFR120TR Vishay Siliconix Check for Price Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR120 vs IRFR120TR
IRFR120 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 IRFR120 vs IRFR120
Part Number Manufacturer Composite Price Description Compare
IRFR120TRL Vishay Siliconix Check for Price Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 IRFR120 vs IRFR120TRL
SIHFR120TRL-GE3 Vishay Siliconix Check for Price TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power IRFR120 vs SIHFR120TRL-GE3
IRFR120TR International Rectifier Check for Price Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR120 vs IRFR120TR
IRFR120PBF International Rectifier Check for Price Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, IRFR120 vs IRFR120PBF
IRFR120-T1 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 IRFR120 vs IRFR120-T1
IRFR120TR Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 7.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, IRFR120 vs IRFR120TR
IRFR120T_R4941 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRFR120 vs IRFR120T_R4941
IRFR120ATM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 IRFR120 vs IRFR120ATM
IRFR120TRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, IRFR120 vs IRFR120TRLPBF
SIHFR120-GE3 Vishay Siliconix Check for Price TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power IRFR120 vs SIHFR120-GE3

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