Part Details for IRFF230 by International Rectifier
Overview of IRFF230 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFF230
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-205AF | 1 |
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$47.3120 | Buy Now |
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NexGen Digital | 220 |
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RFQ |
Part Details for IRFF230
IRFF230 CAD Models
IRFF230 Part Data Attributes:
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IRFF230
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFF230
International Rectifier
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Pbfree Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
| Part Package Code | BCY | |
| Package Description | HERMETIC SEALED, TO-39, 3 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.46 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFF230
This table gives cross-reference parts and alternative options found for IRFF230. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF230, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N6798 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | IRFF230 vs 2N6798 |
| JANTX2N6798 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | IRFF230 vs JANTX2N6798 |
| IRFF230-JQR-BR1 | 5.5A, 200V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF230 vs IRFF230-JQR-BR1 |
| 2N6798R1 | Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | IRFF230 vs 2N6798R1 |
| 2N6798 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Fairchild Semiconductor Corporation | IRFF230 vs 2N6798 |
| 2N6798TX | 5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | Intersil Corporation | IRFF230 vs 2N6798TX |
| JANTXV2N6798 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN | Omnirel Corp | IRFF230 vs JANTXV2N6798 |
| JANTXV2N6798 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Semicoa Semiconductors | IRFF230 vs JANTXV2N6798 |
| IRFF230PBF | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | International Rectifier | IRFF230 vs IRFF230PBF |
| 2N6798R1 | 5.5A, 200V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFF230 vs 2N6798R1 |