| International Rectifier |
Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39 |
$15.4100 / $47.3120
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| Infineon Technologies AG |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$15.1100
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| New Jersey Semiconductor Products, Inc. |
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$15.7440 / $19.2000
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| New Jersey Semiconductor Products Inc |
MOSFET Transistor, N-Channel, TO-205AF |
$16.0000 / $20.8000
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| Harris Semiconductor |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
$47.3120
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| HARTING Technology Group |
INSTOCK |
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| Hongxing Electrical Ltd |
CN3 |
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5.5A I(D),TO-205AF |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Rochester Electronics LLC |
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| TT Electronics Power and Hybrid / Semelab Limited |
5.5A, 200V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Intersil Corporation |
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| General Electric Solid State |
Transistor |
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