Datasheets
IRFD210 by:

Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

Part Details for IRFD210 by International Rectifier

Overview of IRFD210 by International Rectifier

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Price & Stock for IRFD210

Part # Distributor Description Stock Price Buy
Bristol Electronics   66
RFQ
Bristol Electronics   85
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-250VAR 800
  • 1 $3.7200
  • 350 $1.5345
  • 653 $1.3950
$1.3950 / $3.7200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-250VAR 52
  • 1 $3.7200
  • 10 $2.3250
  • 33 $2.0460
$2.0460 / $3.7200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-250VAR 1024
  • 1 $3.0690
  • 123 $1.8926
  • 529 $1.6880
$1.6880 / $3.0690 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-250VAR 160
  • 1 $6.0000
  • 7 $3.0000
  • 68 $2.8000
$2.8000 / $6.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-250VAR 473
  • 1 $3.7200
  • 162 $1.7205
  • 350 $1.5345
$1.5345 / $3.7200 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 33
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now

Part Details for IRFD210

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IRFD210 Part Data Attributes:

IRFD210 International Rectifier
Buy Now Datasheet
Compare Parts:
IRFD210 International Rectifier Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code DIP
Package Description DIP-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.6 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD210

This table gives cross-reference parts and alternative options found for IRFD210. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD210, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD210 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD210
IRFD210 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Rochester Electronics LLC IRFD210 vs IRFD210
Part Number Description Manufacturer Compare
IRFD210R 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD210R
IRFD221 800mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Rochester Electronics LLC IRFD210 vs IRFD221
IRFD211 Small Signal Field-Effect Transistor, 0.6A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Harris Semiconductor IRFD210 vs IRFD211
IRFD221 800mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD210 vs IRFD221
IRFD210 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Rochester Electronics LLC IRFD210 vs IRFD210
IRFD210 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD210
IRFD212 Small Signal Field-Effect Transistor, 0.45A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Harris Semiconductor IRFD210 vs IRFD212
IRFD212 Small Signal Field-Effect Transistor, 0.45A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products IRFD210 vs IRFD212
IRFD212 450mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD210 vs IRFD212
IRFD221 800mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD221

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