Datasheets
IRFD210 by:

600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Part Details for IRFD210 by Rochester Electronics LLC

Overview of IRFD210 by Rochester Electronics LLC

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Part Details for IRFD210

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IRFD210 Part Data Attributes

IRFD210 Rochester Electronics LLC
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IRFD210 Rochester Electronics LLC 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.6 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFD210

This table gives cross-reference parts and alternative options found for IRFD210. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD210, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFD210 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD210
Part Number Description Manufacturer Compare
IRFD221 800mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD210 vs IRFD221
IRFD221 Small Signal Field-Effect Transistor, 0.8A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Harris Semiconductor IRFD210 vs IRFD221
IRFD212 Small Signal Field-Effect Transistor, 0.45A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products IRFD210 vs IRFD212
IRFD212 450mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD210 vs IRFD212
IRFD211 600mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD211
IRFD210 600mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD210
IRFD221 800mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Rochester Electronics LLC IRFD210 vs IRFD221
IRFD211 600mA, 150V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Motorola Mobility LLC IRFD210 vs IRFD211
IRFD212 450mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Intersil Corporation IRFD210 vs IRFD212
IRFD221 Small Signal Field-Effect Transistor, 0.8A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products IRFD210 vs IRFD221

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