| Manufacturer | Description | Price Range | Set Alert | Details |
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| Vishay Siliconix | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | $0.3412 / $4.9773 |
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| International Rectifier | Power Field-Effect Transistor, 1.1A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN | $0.7920 / $3.4160 |
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| Motorola Semiconductor Products | Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | $0.5500 / $3.4160 |
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| Harris Semiconductor | Small Signal Field-Effect Transistor, 1.1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | $0.7091 / $3.1500 |
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| Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,1.1A I(D),TO-250VAR |
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| Motorola Mobility LLC | 1100mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| General Electric Solid State | Transistor |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Vishay Intertechnologies | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HVMDIP-4 |
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| Rochester Electronics LLC | 1100mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| Intersil Corporation | 1100mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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