Part Details for IRFD123 by International Rectifier
Overview of IRFD123 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFD123
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 250 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 54 |
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$0.7920 / $1.3200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-250VAR | 1 |
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$3.4160 | Buy Now |
Part Details for IRFD123
IRFD123 CAD Models
IRFD123 Part Data Attributes:
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IRFD123
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFD123
International Rectifier
Power Field-Effect Transistor, 1.1A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | DIP | |
Package Description | SIMILAR TO MO-001AN, 3 PIN | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 1.1 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDIP-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Pulsed Drain Current-Max (IDM) | 8.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for IRFD123
This table gives cross-reference parts and alternative options found for IRFD123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFD123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFD123 | 1100mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Motorola Mobility LLC | IRFD123 vs IRFD123 |
IRFD123 | Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Motorola Semiconductor Products | IRFD123 vs IRFD123 |